| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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12,100 pcs
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12100 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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The AON2260 from AOS is a 60V N-Channel MOSFET utilizing advanced trench technology for low on-resistance. This device is suitable for applications such as boost converters and synchronous rectifiers in consumer, telecom, and industrial power supplies, as well as LED backlighting.
Key electrical characteristics include a Drain-Source Breakdown Voltage of 60V and a continuous drain current of 6A at 25°C. The on-resistance is specified as less than 44mΩ at VGS=10V and less than 53mΩ at VGS=4.5V. The MOSFET has a gate threshold voltage ranging from 1.5V to 2.5V.
Packaged in a DFN 2x2B surface-mount package, the AON2260 offers excellent thermal performance with a maximum junction-to-ambient thermal resistance of 37°C/W at 25°C. The operating and storage temperature range is -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V minimum at VGS=0V.
DFN 2x2B surface mount package.
-55°C to 150°C junction and storage temperature.
6A at 25°C ambient.
1.5V typical, 2V typical, 2.5V maximum.
44mΩ maximum at VGS=10V, ID=6A.