| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,259 pcs
|
2259 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| FET Type | |
| Gate Charge | |
| Input Capacitance | |
| Lead Style | |
| Mounting Type | |
| Power Dissipation | |
| SVHC Present |
The AOI2610 is a single N-Channel MOSFET manufactured by Alpha & Omega Semiconductor. It is designed for applications requiring a 60V drain-to-source voltage and can handle a continuous drain current of up to 46A at 25°C case temperature. The MOSFET exhibits a low on-resistance (Rds(on)) of 10.7 mOhm at 20A and 10V gate-source voltage, contributing to efficient power handling.
This component features a gate charge (Qg) of 30nC at 10V and an input capacitance (Ciss) of 2007pF at 30V. The maximum power dissipation is rated at 2.5W. The AOI2610 is packaged in a TO-251-3 (IPak) through-hole package with short leads, suitable for various mounting configurations.
Key electrical parameters include a gate threshold voltage (Vgs(th)) of 2.5V maximum at 250µA. The component is specified with RoHS3 compliance and an MSL of 1 Unlimited.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V.
46A at Tc=25°C, 10A at Ta=25°C.
10.7mOhm maximum at Id=20A, Vgs=10V.
2.5V maximum at Id=250µA.
TO-251-3 through-hole with short leads.
30nC at Vgs=10V.
2007pF typical at Vds=30V.