| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,700 pcs
|
6700 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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| Manufacturer Name | |
| Input Capacitance | |
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| Tape & Reel |
The AOS AOD66923 is a 100V N-Channel MOSFET utilizing AlphaSGT technology. It is designed for applications requiring high frequency switching and synchronous rectification. Key electrical characteristics include a low on-resistance, with RDS(ON) typically 9.2mΩ at VGS=10V and 11.7mΩ at VGS=4.5V. The continuous drain current is rated at 58A at TC=25°C.
This MOSFET offers excellent QG x RDS(ON) product (FOM) and a spike-optimized process. It supports logic-level driving and is tested 100% for UIS and Rg. The device is housed in a TO-252 package, suitable for surface mount applications.
With a maximum junction temperature of 150°C and a junction-to-case thermal resistance of 1.35°C/W, the AOD66923 is engineered for reliable performance in demanding power applications. Its robust design makes it suitable for use in automotive, cloud computing, consumer electronics, and industrial power supplies.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage (BVDSS) is 100V.
The typical gate threshold voltage (VGS(th)) is 2.1V.
The maximum on-resistance (RDS(ON)) at VGS=10V is 11mΩ.
The maximum continuous drain current (ID) is 58A at TC=25°C.
The AOD66923 comes in a TO-252 package.
The maximum junction and storage temperature range is 150°C.
The RoHS status is RoHS3 Compliant.