| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
620 pcs
|
620 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The AOD5N40 is an N-Channel MOSFET from Alpha & Omega Semiconductor, designed for high voltage applications. It features a drain-source breakdown voltage of 400V minimum at 25°C and 500V at 150°C. The continuous drain current is rated at 4.2A at 25°C case temperature, with a maximum on-resistance of 1.6Ω at Vgs=10V. Typical gate charge is 6.9nC, enabling fast switching with turn-on delay of 16.5ns and turn-off delay of 24ns. The device is 100% UIS tested for avalanche capability, with single pulsed avalanche energy of 86mJ. It is available in a TO-252 (DPAK) surface mount package. This MOSFET is suitable for AC-DC power supplies, offline flyback converters, and other high voltage switching applications. It is RoHS3 compliant (unverified) and has an MSL of Level 1.
| Qty | Low | High |
|---|---|---|
| 2,500+ | $0.27 | $0.27 |
| 5,000+ | $0.27 | $0.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 400V minimum at 25°C junction temperature, and 500V minimum at 150°C.
The AOD5N40 is available in a TO-252 (DPAK) surface mount package, also known as TO-252-3, DPak (2 Leads + Tab), SC-63.
The junction operating temperature range is -50°C to 150°C.
It is marked as RoHS3 compliant, but this is unverified and should be treated as low confidence.
The gate threshold voltage is 3.4V minimum, 4V typical, and 4.5V maximum at Vds=5V and Id=250µA.
The drain-source on-resistance is 1.25Ω typical and 1.6Ω maximum at Vgs=10V and Id=1A.
The total gate charge is 5.5nC minimum, 6.9nC typical, and 8.5nC maximum at Vgs=10V, Vds=320V, Id=4.2A.