| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,090 pcs
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1090 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The AOD4182 is an N-Channel MOSFET from Alpha&Omega Semicondu Ctor with a drain-source voltage rating of 80V. It supports a continuous drain current of 53A at case temperature 25°C and 8.5A at ambient temperature 25°C. The maximum on-resistance is 15.5 milliohms at Vgs=10V and Id=20A, ensuring efficient power handling. The gate charge is 34 nC at 10V, and input capacitance is 2005 pF at Vds=40V, making it suitable for moderate-speed switching applications.
Power dissipation is rated at 100W at case temperature 25°C and 2.5W at ambient temperature. The device operates over a junction temperature range of -55°C to 175°C, providing robust thermal performance. It is designed for surface-mount assembly in a TO-252-3 package, also known as DPAK (2 Leads + Tab) or SC-63.
Typical applications include power management, DC-DC converters, motor control, and load switching circuits where low on-resistance and high current capability are required. The component is marked as RoHS3 compliant, though compliance status is unverified.
80V.
TO-252-3, DPAK (2 Leads + Tab), SC-63, with supplier device package TO-252 (DPAK).
-55°C to 175°C (junction temperature).
The component is marked as RoHS3 compliant, but the compliance status is unverified.
53A at case temperature 25°C, and 8.5A at ambient temperature 25°C.
15.5 milliohms maximum at Vgs=10V, Id=20A.
4.2V maximum at Id=250µA.