| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,573 pcs
|
2573 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
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| Manufacturer Name | |
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The AOS AOD4180 is an 80V N-Channel MOSFET utilizing SDMOS trench technology for excellent RDS(ON) and low gate charge. This design results in outstanding efficiency and controlled switching behavior, making it well-suited for PWM, load switching, and general-purpose applications.
Key electrical specifications include a Drain-Source Voltage (VDS) of 80V and a maximum continuous drain current (ID) of 54A at 25°C. The On-Resistance (RDS(ON)) is as low as 14mΩ at VGS=10V. The device operates within a junction and storage temperature range of -55 to 175°C.
Packaged in a TO-252 (DPAK) surface-mount package, the AOD4180 offers thermal resistance of 0.8°C/W junction-to-case. Its universal technology ensures reliable performance in various demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage (VDS) for the AOD4180 is 80V.
The typical Gate Threshold Voltage (VGS(th)) for the AOD4180 is 3.4V.
The maximum On-Resistance (RDS(ON)) for the AOD4180 is 14mΩ at VGS=10V.
The continuous drain current (ID) for the AOD4180 at 25°C is 54A.
The AOD4180 MOSFET is available in a TO-252 package.
The junction and storage temperature range for the AOD4180 is -55 to 175°C.