| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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7,500 pcs
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7500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The AOD409_002 is a P-Channel enhancement-mode MOSFET manufactured by Alpha & Omega Semiconductor. It is rated for a maximum drain-source voltage of 60V and a continuous drain current of 26A at case temperature. The device features a maximum drain-source on-resistance of 40mΩ at 20A with 10V gate drive, and supports gate drive voltages of 4.5V and 10V.
Electrical characteristics include a maximum gate charge of 54nC at 10V gate-source voltage, maximum input capacitance of 3600pF at 30V drain-source voltage, and a maximum gate-source threshold voltage of 2.4V at 250µA drain current. The maximum gate-source voltage rating is ±20V. Power dissipation is rated at 2.5W at ambient temperature and 60W at case temperature.
The device is housed in a TO-252-3 (DPAK) surface-mount package with a supplier device package designation of TO-252 (DPAK). It is designed for surface mount assembly. The operating junction temperature range is -55°C to 175°C.
This P-Channel MOSFET is suitable for load switching, power management, and other applications requiring high-efficiency switching in a compact surface-mount package.
The maximum drain-source voltage (Vdss) is 60V.
The maximum continuous drain current is 26A at case temperature (Tc).
The maximum drain-source on-resistance is 40mΩ at 20A drain current with 10V gate-source voltage.
The AOD409_002 is available in a TO-252-3 (DPAK) surface-mount package, with supplier device package TO-252 (DPAK).
The operating junction temperature range is -55°C to 175°C.
The maximum gate charge is 54nC at 10V gate-source voltage.
Maximum power dissipation is 2.5W at ambient temperature and 60W at case temperature.