| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
14,691 pcs
|
14691 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
10,000 pcs
|
10000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,336 pcs
|
2336 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
2,250 pcs
|
2250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Halogen Free | |
| Input Capacitance | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation | |
| Reverse Recovery Time |
The AOS AOD403 is a P-Channel MOSFET designed with advanced trench technology, providing excellent Rds(on) and low gate resistance. This device features a Drain-Source Voltage (Vds) of -30V and a maximum continuous Drain Current (Id) of -70A at 25°C. The On-Resistance (Rds(on)) is rated at a maximum of 8mΩ when Vgs is 10V.
With a maximum power dissipation of 90W at 25°C and a maximum junction temperature of 175°C, the AOD403 is well-suited for demanding applications. Its typical gate charge is 51nC, with a typical gate-source threshold voltage around -2.50V.
The MOSFET is housed in a TO252 package, designed for surface mounting. This package offers good thermal performance, complementing the device's capabilities for high current load applications. The component is also RoHS3 compliant and Halogen-Free.
Reliability data indicates a FIT rate of 3 per billion hours and an MTTF of 39656 years, underscoring its suitability for industrial and automotive applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-30V
8mΩ
-70A
TO252
RoHS3 Compliant
Level 1
51nC