| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The AOD2910 is an N-Channel MOSFET from Alpha & Omega Semiconductor, utilizing advanced trench MOSFET technology for optimized high-frequency switching performance. It features a drain-source voltage rating of 100V and a continuous drain current of 31A at TC=25°C (6.5A at TA=25°C). The static drain-source on-resistance is typically 18.5mΩ and guaranteed below 24mΩ at VGS=10V, and below 33mΩ at VGS=4.5V. This device is designed for boost converters and synchronous rectifiers in consumer, telecom, industrial power supplies, and LED backlighting applications. It is 100% tested for UIS and gate resistance. The AOD2910 is offered in a TO252 (DPAK) surface-mount package, with a junction-to-case thermal resistance of 2.8°C/W.
| Qty | Low | High |
|---|---|---|
| 2,500+ | $0.44 | $0.44 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) is 100V.
At case temperature 25°C, continuous drain current is 31A; at ambient temperature 25°C, it is 6.5A.
RDS(on) is typically 18.5mΩ and maximum 24mΩ at VGS=10V, ID=20A. At VGS=4.5V it is maximum 33mΩ.
The junction and storage temperature range is -55°C to 175°C.
The AOD2910 is offered in a TO252 (DPAK) surface-mount package.
Yes, the device is 100% UIS tested.
The gate threshold voltage is typically 2.15V, with a range of 1.6V to 2.7V at ID=250μA.