AOD1N60 AOD1N60 is a 600V, 1.3A N-Channel MOSFET in a TO-252 (DPAK) surface-mount package. It features 9Ω maximum on-resistance at 10V gate drive.
Mfr Part #:

AOD1N60

Available from 1 distributors
Mfr Name: Alpha&Omega Semicondu Ctor
Alpha&Omega Semicondu Ctor
AOD1N60 is a 600V, 1.3A N-Channel MOSFET in a TO-252 (DPAK) surface-mount package. It features 9Ω maximum on-resistance at 10V gate drive.
✓ Total Stock: 3,500 pcs
$ Price Range: $0.21 - $0.99

AOD1N60 Available from 1 distributor

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✓ Non-Authorised
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AOD1N60 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

AOD1N60 Description

Short technical summary and product information.

AOD1N60 is an N-Channel enhancement-mode MOSFET fabricated with an advanced high-voltage MOSFET process. It is rated for 600V drain-to-source voltage and 1.3A continuous drain current at 25°C case temperature. The device has a maximum on-resistance of 9Ω at 10V gate-source voltage and 650mA drain current, with typical on-resistance of 7.5Ω under the same conditions. It also offers guaranteed avalanche capability and is 100% UIS tested.

 

This MOSFET is designed for AC-DC offline power supply applications. The low input capacitance (130pF typical at 25V) and low gate charge (6.1nC typical at 10V) reduce switching losses in power conversion circuits. The body diode has a typical forward voltage of 0.65V at 1A, and peak diode recovery dv/dt is rated at 5V/ns.

 

The device is housed in a TO-252-3 (DPak) surface-mount package and is also available in IPAK (TO251A) and TO-252 variants. It operates over a junction temperature range of -50°C to 150°C, with a maximum power dissipation of 45W at 25°C case temperature. Thermal resistance from junction to case is 2.3°C/W typical, 2.8°C/W maximum.

AOD1N60 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: AOD1N60 600V N-Channel MOSFET
Subcategory: Single MOSFETs

AOD1N60 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

AOD1N60 Estimated Pricing

Qty Low High
1+ $0.99 $0.99
10+ $0.61 $0.61
50+ $0.45 $0.45
100+ $0.40 $0.40
500+ $0.31 $0.31
2,500+ $0.24 $0.24
7,500+ $0.21 $0.21

Estimated market price range - modelled values for guidance only, not live distributor offers.

AOD1N60 Features

  • Rated for 600V drain-source voltage.
  • Supports 1.3A continuous drain current.
  • 9Ω maximum on-resistance at 10V.
  • 100% UIS tested with avalanche capability.
  • Ships in TO-252 DPAK surface-mount package.

AOD1N60 Applications

  • Designed for AC-DC offline power supplies.
  • Suitable for power switching applications.
  • Ideal for 600V-rated power conversion circuits.

AOD1N60 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the AOD1N60?

The AOD1N60 has a maximum drain-to-source voltage rating of 600 V.

What is the continuous drain current rating?

The continuous drain current is 1.3 A at Tc=25°C; pulsed drain current is rated up to 4 A.

What is the on-resistance of the AOD1N60?

Maximum on-resistance is 9 Ω at Vgs=10V, Id=650mA; typical on-resistance is 7.5 Ω under the same conditions.

What is the power dissipation rating?

Maximum power dissipation is 45 W at Tc=25°C.

What is the operating temperature range?

The operating junction temperature range is -50°C to 150°C.

What package is the AOD1N60 available in?

The AOD1N60 is supplied in a TO-252-3 (DPak, 2 leads + tab, SC-63) surface-mount package (TO-252/DPAK).

Is the AOD1N60 RoHS compliant?

The existing database lists it as RoHS3 compliant, but this status is unverified and should be confirmed with the manufacturer.

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