| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,466 pcs
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2466 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
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| Industrial Grade | |
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The AOS AOB27S60L is an N-Channel Power MOSFET from the αMOS™ family, designed for robust performance in switching applications. It features a high breakdown voltage of 600V and a continuous drain current of 27A.
Key electrical characteristics include a low typical on-resistance of 0.16 Ohms at 10V gate-source voltage and a typical gate charge of 26nC. The MOSFET also exhibits fast switching times, with a turn-on delay of 31ns and a turn-off delay of 99ns.
Fabricated using advanced αMOS™ high voltage process technology, this MOSFET is suitable for new and existing offline power supply designs. Its guaranteed avalanche capability and low Rds(on), Qg, and Eoss contribute to its adoption in various power electronics systems.
The AOB27S60L is available in a TO-263 surface mount package, facilitating integration into compact designs. It operates within a junction temperature range of -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 600V.
The maximum continuous drain current is 27A.
The typical on-resistance is 0.16 Ohms.
The typical gate charge is 26nC.
The junction temperature range is -55°C to 150°C.
The AOB27S60L is available in a TO-263 package.
The RoHS status is RoHS3 Compliant.