| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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37,545 pcs
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37545 pcs | On Request | 1 | On Request | On Request | 2019+ | On Request | On Request | |
|
480 pcs
|
480 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
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The AO8822 from Alpha and Omega Semiconductor is a Common-Drain Dual N-Channel MOSFET designed for various applications. It features a maximum drain-source voltage (Vds) of 20V and a low on-resistance (Rds(on)) of 18mΩ at a gate-source voltage (Vgs) of 10V. At a Vgs of 4.5V, the Rds(on) is 22mΩ, and at 2.5V, it is 27mΩ.
This MOSFET has a continuous drain current (Id) of 7A at 25°C and a power dissipation (Pd) of 1.50W at 25°C. Key electrical parameters include a gate-source voltage range of ±12V, a gate threshold voltage (Vgs(th)) typically around 0.80V, and various capacitance and charge values such as input capacitance (Ciss) of 650pF and gate charge (Qg) of 6.70nC at Vgs=4.5V.
The AO8822 is qualified for industrial applications and has an ESD diode for protection. It operates within a maximum junction temperature (Tj max) of 150°C. The component is housed in a TSSOP-8L package, suitable for surface mounting.
Applications for the AO8822 include automotive, cloud computing, consumer electronics, and industrial power supplies. Its dual N-channel configuration and low voltage rating make it suitable for power management tasks in these sectors.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.58 | $1.58 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (V DS) is 20V.
The maximum on-resistance (R DS(ON)) is 18mΩ at VGS=10V, 22mΩ at VGS=4.5V, and 27mΩ at VGS=2.5V.
The gate threshold voltage (V GS(th)) ranges from 0.5V (minimum) to 1V (maximum), with a typical value of 0.8V.
Yes, the AO8822 has an internal ESD diode for ESD protection.
The AO8822 is packaged in a TSSOP-8L surface mount package.
The AO8822 is a common-drain dual N-channel MOSFET.
The maximum junction temperature (Tj) is 150°C.