| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,617 pcs
|
2617 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
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| Manufacturer Name | |
| Input Capacitance | |
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| Power Dissipation | |
| Tape & Reel |
The AOS AO8820 is a 20V Common-Drain Dual N-Channel MOSFET utilizing advanced trench technology. This configuration provides excellent RDS(ON) performance, low gate charge, and the capability to operate with gate voltages as low as 1.8V, while maintaining a 12V VGS(MAX) rating. The device is ESD protected.
Key electrical characteristics include a Drain-Source Breakdown Voltage of 20V and a continuous drain current of 7A at 25°C. The Static Drain-Source On-Resistance is as low as 21mΩ at VGS=10V and 24mΩ at VGS=4.5V. The total gate charge is typically 6nC at VGS=4.5V.
Packaged in a TSSOP-8 surface mount package, the AO8820 is suitable for applications requiring uni-directional or bi-directional load switching. Its common-drain configuration facilitates integration into compact designs. The operating temperature range is -55°C to 150°C.
This MOSFET is suitable for use in automotive, cloud computing, consumer electronics, and industrial power supply applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.58 | $1.58 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V
7A at 25°C
-55°C to 150°C
TSSOP-8
0.8V typical
21mΩ maximum
6nC typical