AO8810

The AO8810 is a common-drain dual N-channel MOSFET fabricated with advanced trench technology, providing low on-resistance and low gate charge. It is ESD protected and designed for unidirectional or bidirectional load switch applications.

Electrical characteristics include a maximum drain-source voltage of 20V, gate-source voltage of ±8V, and continuous drain current of 7A at 25°C (5.7A at 70°C). The device offers low on-resistance: 20 mΩ max at VGS=4.5V, 20.5 mΩ at VGS=4.0V, 21.5 mΩ at VGS=3.1V, 23 mΩ at VGS=2.5V, and 28 mΩ at VGS=1.8V. Gate threshold voltage ranges from 0.4V to 1.1V.

Switching performance is characterized by typical turn-on delay of 280 ns, rise time of 328 ns, turn-off delay of 3.76 µs, and fall time of 2.24 µs. Total gate charge is 10 nC typical (14 nC max) at VGS=4.5V. The device is surface-mount packaged in an 8-TSSOP (0.173", 4.40mm width) package with a maximum power dissipation of 1.5W at 25°C and 1.0W at 70°C. Junction-to-ambient thermal resistance is 64°C/W for t ≤ 10s and 89°C/W steady-state.

Typical applications include load switching, battery protection, power distribution in portable devices, and low-voltage DC-DC conversion. The common-drain configuration simplifies routing in bidirectional current control circuits.