| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,600 pcs
|
2600 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
905 pcs
|
905 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| Mounting Type | |
| SVHC Present |
The AOS AO8808A is a 20V Dual N-Channel MOSFET designed with advanced trench technology. This technology provides excellent on-state resistance (RDS(ON)) and low gate charge, enabling operation with gate voltages as low as 1.8V while maintaining a 12V VGS(MAX) rating. The device includes ESD protection.
Key electrical characteristics include a Drain-Source Breakdown Voltage (BVDSS) of 20V and a continuous drain current (ID) of 7.9A at 25°C. The RDS(ON) is as low as 14mΩ at VGS=10V. Switching parameters such as turn-on delay time (tD(on)) and turn-off delay time (tD(off)) are also specified.
The AO8808A is housed in a TSSOP-8 package, suitable for surface mount applications. Its thermal characteristics include a maximum junction-to-ambient thermal resistance of 73°C/W for transient conditions. This MOSFET is suitable for various applications including automotive, cloud computing, and consumer electronics.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.58 | $1.58 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage (BVDSS) for the AO8808A is 20V.
The typical Gate Threshold Voltage (VGS(th)) for the AO8808A is 0.75V.
The continuous drain current (ID) for the AO8808A is 7.9A at 25°C.
The typical Static Drain-Source On-Resistance (RDS(ON)) for the AO8808A at VGS=10V is 14mΩ.
The AO8808A is available in a TSSOP-8 package.
The operating temperature range (Junction and Storage Temperature) for the AO8808A is -55°C to 150°C.