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AO7801 The AOS AO7801 is a P-Channel Enhancement Mode Field Effect Transistor designed for load switching and DC-DC converters. It offers a -20V drain-source voltage and low RDS(ON).
Mfr Part #:

AO7801

Available from 2 distributors
Mfr Name: AOS
AOS
The AOS AO7801 is a P-Channel Enhancement Mode Field Effect Transistor designed for load switching and DC-DC converters. It offers a -20V drain-source voltage and low RDS(ON).
✓ Total Stock: 2,841 pcs
$ Price Range: $2.40

AO7801 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
2,579 pcs
On Request
2579 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
262 pcs
On Request
262 pcs On Request 1 On Request On Request 16+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

AO7801 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Input Capacitance
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SVHC Present
Tape & Reel
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AO7801 Description

Short technical summary and product information.

The AOS AO7801 is a dual P-Channel Enhancement Mode Field Effect Transistor utilizing advanced trench technology. It is designed for applications such as load switching, low current inverters, and low current DC-DC converters. The device features a drain-source voltage (VDS) of -20V and a continuous drain current (ID) of -0.6A at 25°C.

 

Key electrical characteristics include a low gate threshold voltage (VGS(th)) as low as -0.5V, and a static drain-source on-resistance (RDS(ON)) of less than 520mΩ at VGS = -4.5V. The transistor also exhibits low gate charge (Qg) of 1.44nC typical.

 

Packaged in a compact SC70-6L (SOT-363) surface-mount package, the AO7801 is suitable for space-constrained designs. It operates within a junction temperature range of -55°C to 150°C and has a power dissipation of 0.3W at 25°C.

 

This MOSFET is ESD protected to 2KV HBM and is qualified for the consumer market. It is noted as obsolete, suggesting users should consider alternative parts for new designs.

AO7801 Quick Information

Product Type: MOSFET
Canonical Name: Dual P-Channel Enhancement Mode Field Effect Transistor
Subcategory: P-Channel

AO7801 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

AO7801 Estimated Pricing

Qty Low High
1+ $2.40 $2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

AO7801 Features

  • Dual P-Channel Enhancement Mode MOSFET.
  • Drain-Source Voltage: -20V.
  • Continuous Drain Current: -0.6A.
  • Low RDS(ON): < 520mΩ at VGS=-4.5V.
  • Compact SC70-6L package.

AO7801 Applications

  • Suitable for load switching.
  • Used in low current inverters.
  • Ideal for DC-DC converters.
  • Consumer market applications.

AO7801 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the AO7801?

-20V

What is the typical gate threshold voltage for the AO7801 MOSFET?

-0.6V

What is the maximum RDS(ON) for the AO7801 at VGS = -4.5V?

520mΩ

What is the continuous drain current of the AO7801 at 25°C?

-0.6A

What is the package type for the AOS AO7801?

SC70-6L

What is the RoHS status of the AO7801?

RoHS3 Compliant

What is the Moisture Sensitivity Level (MSL) for the AO7801?

1 Unlimited

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