| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,490 pcs
|
4490 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request | |
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
998 pcs
|
998 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
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| Manufacturer Name | |
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| Tape & Reel |
The AOS AO7400 is a 30V N-Channel MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) performance, low gate charge, and the ability to operate with gate voltages as low as 2.5V, all within a compact SC70 (SOT-323) footprint.
Key electrical characteristics include a Drain-Source Breakdown Voltage (VDS) of 30V and a maximum continuous drain current (ID) of 1.7A at 25°C. The On-State Resistance (RDS(ON)) is rated at a maximum of 55mΩ at VGS=10V, 65mΩ at VGS=4.5V, and 85mΩ at VGS=2.5V. The device also features a typical gate threshold voltage (VGS(th)) of 1V.
With a power dissipation (PD) of 0.35W at 25°C and a junction-to-ambient thermal resistance (RthJA) of 300°C/W at 70°C, the AO7400 is suitable for applications requiring efficient power handling in a small form factor. Its thermal characteristics and electrical performance make it a versatile component.
The AO7400 is available in an SC70 surface-mount package. This package type is commonly used in applications where space is limited, such as consumer electronics and portable devices. The surface mount design facilitates automated assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is 30V at VGS=0V.
The AO7400 comes in an SC70 surface mount package.
The junction and storage temperature range is -55°C to 150°C.
The continuous drain current is 1.7A at TA=25°C.
The maximum on-resistance is 55mΩ at VGS=10V and ID=1.7A.
The gate threshold voltage is typically 1V, with a range of 0.5V to 1.5V.
The typical input capacitance is 235pF at VDS=15V and f=1MHz.