| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,232 pcs
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6232 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request | |
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1,230 pcs
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1230 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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364 pcs
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364 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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319 pcs
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319 pcs | On Request | 1 | On Request | On Request | 1143+ | On Request | On Request |
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The AO6604 from Alpha and Omega Semiconductor is a 20V complementary MOSFET, combining N-channel and P-channel transistors in a single package. It is designed using advanced trench MOSFET technology to achieve very low on-state resistance (RDS(ON)).
Key electrical characteristics include a Drain-Source Voltage (VDS) of 20V for the N-channel and -20V for the P-channel. The continuous drain current (ID) is rated at 3.4A for the N-channel and -2.5A for the P-channel at 25°C. The device offers low RDS(ON) values, with a maximum of 65mΩ at VGS=4.5V for the N-channel and 75mΩ at VGS=-4.5V for the P-channel.
This MOSFET is housed in a compact TSOP-6L surface-mount package, making it suitable for space-constrained applications. Its design is ideal for load switch and battery protection circuits, offering efficient power management.
The AO6604 is qualified for industrial applications and operates within a junction temperature range of -55°C to 150°C. Its complementary nature allows for versatile circuit designs.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-Source Voltage (VDS) is 20V for the N-channel and -20V for the P-channel.
The maximum continuous drain current is 3.4A for the N-channel and -2.5A for the P-channel at 25°C.
The AO6604 is available in a TSOP-6L package.
The typical Gate Threshold Voltage (VGS(th)) for the N-channel is 0.7V.
The typical Gate Threshold Voltage (VGS(th)) for the P-channel is -0.65V.
The maximum RDS(ON) for the N-channel at VGS=4.5V is 65mΩ.
The maximum RDS(ON) for the P-channel at VGS=-4.5V is 75mΩ.
