Mfr Part #:

AO6601

Mfr Name: AOS

The AOS AO6601 is a 30V complementary MOSFET designed for high-speed power inverter applications. It offers excellent RDS(ON) and low gate charge.

✓ Total Stock: 4,213 pcs

$ Price Range: $1.58

AO6601 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	4,213 pcs On Request	4213 pcs	On Request	1	On Request	On Request	15+13+	On Request	On Request

AO6601 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	AOS
Input Capacitance	235pF
Lead Style	Smd
Mounting Type	Surface Mount
Power Dissipation	1.15W
Tape & Reel	Yes

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AO6601 Description

Short technical summary and product information.

The AOS AO6601 is a 30V complementary MOSFET, comprising both N-channel and P-channel devices. It utilizes advanced trench technology to deliver excellent on-resistance (RDS(ON)) and low gate charge, making it suitable for high-speed power inverter applications.

Key electrical characteristics include a Drain-Source Breakdown Voltage (BVDSS) of 30V and a Gate-Source Voltage (VGS) rating of ±12V. The N-channel device offers a continuous drain current (ID) of 3.4A with an RDS(ON) as low as 60mΩ at VGS=10V. The P-channel device provides a continuous drain current of -2.3A with an RDS(ON) of 115mΩ at VGS=-10V.

This MOSFET is housed in a compact TSOP-6 package, suitable for surface mount applications. Its thermal characteristics include a maximum junction-to-ambient thermal resistance (RqJA) of 78°C/W at TA=25°C, with a power dissipation (PD) of 1.15W at TA=25°C.

The AO6601 is designed for various applications requiring efficient power switching. Its complementary nature simplifies design in certain power topologies.

AO6601 Quick Information

Product Type: Complementary MOSFET

Series: AO6601

Canonical Name: AO6601 30V Complementary MOSFET

Subcategory: Complementary MOSFET

AO6601 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

AO6601 Estimated Pricing

Qty	Low	High
1+	$1.58	$1.58

Estimated market price range - modelled values for guidance only, not live distributor offers.

AO6601 Features

30V complementary N-channel and P-channel MOSFETs
Low on-resistance (RDS(ON))
Fast switching characteristics
TSOP-6 surface mount package
Suitable for power inverter applications

AO6601 Applications

High-speed power inverters
Power management circuits
Consumer electronics
Industrial power supplies

AO6601 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the Drain-Source Breakdown Voltage for the AO6601?

The Drain-Source Breakdown Voltage (BVDSS) for the AO6601 is 30V.

What is the maximum continuous drain current for the N-channel AO6601?

The maximum continuous drain current (ID) for the N-channel AO6601 at TA=25°C is 3.4A.

What is the maximum continuous drain current for the P-channel AO6601?

The maximum continuous drain current (ID) for the P-channel AO6601 at TA=25°C is -2.3A.

What is the typical on-resistance of the AO6601 N-channel MOSFET at VGS=10V?

The typical on-resistance (RDS(ON)) of the AO6601 N-channel MOSFET at VGS=10V is 60mΩ.

What is the typical on-resistance of the AO6601 P-channel MOSFET at VGS=-10V?

The typical on-resistance (RDS(ON)) of the AO6601 P-channel MOSFET at VGS=-10V is 115mΩ.

What is the package type for the AO6601?

The AO6601 is available in a TSOP-6 package.

What is the operating temperature range for the AO6601?

The operating junction and storage temperature range for the AO6601 is -55°C to 150°C.