| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,913 pcs
|
9913 pcs | On Request | 1 | On Request | On Request | 15+/14+ | On Request | On Request | |
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Power Dissipation | |
| Tape & Reel |
The AOS AO6424 is an N-Channel Enhancement Mode Field Effect Transistor designed using advanced trench technology. This technology provides excellent on-resistance (RDS(ON)) and low gate charge, making it suitable for various applications.
Key electrical specifications include a drain-source breakdown voltage (BVDSS) of 30V and a continuous drain current (ID) of 5A at 25°C. The on-resistance is rated at a maximum of 38mΩ at VGS=10V and 50mΩ at VGS=4.5V. The gate threshold voltage (VGS(th)) typically ranges from 1.5V to 2.5V.
This MOSFET is designed for applications such as load switching and Pulse Width Modulation (PWM). Its thermal characteristics include a maximum power dissipation of 1.25W at 25°C and a junction-to-ambient thermal resistance of 130°C/W. The device operates within a junction and storage temperature range of -55°C to 150°C.
The AO6424 is packaged in a TSOP-6L surface-mount package. It is suitable for industrial applications and is available on tape and reel.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.87 | $1.87 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage (BVDSS) of the AO6424 is a minimum of 30V.
The maximum continuous drain current (ID) for the AO6424 at 25°C is 5A.
The typical on-resistance (RDS(ON)) of the AO6424 at VGS=10V is less than 38mΩ.
The gate threshold voltage (VGS(th)) for the AO6424 typically ranges from 1.5V to 2.5V.
The AO6424 is available in a TSOP-6L package.
The junction and storage temperature range for the AO6424 is -55°C to 150°C.