AO6424 The AOS AO6424 is an N-Channel Enhancement Mode Field Effect Transistor with a 30V drain-source breakdown voltage and 5A continuous drain current. It utilizes advanced trench technology for excellent RDS(ON).
Mfr Part #:

AO6424

Available from 2 distributors
Mfr Name: AOS
AOS
The AOS AO6424 is an N-Channel Enhancement Mode Field Effect Transistor with a 30V drain-source breakdown voltage and 5A continuous drain current. It utilizes advanced trench technology for excellent RDS(ON).
✓ Total Stock: 12,913 pcs
$ Price Range: $1.87

AO6424 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
9,913 pcs
9913 pcs On Request 1 On Request On Request 15+/14+ On Request On Request
Non-Authorised Inventory information
3,000 pcs
3000 pcs On Request 1 On Request On Request 22+ On Request On Request

AO6424 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Mounting Type
Power Dissipation
Tape & Reel

AO6424 Description

Short technical summary and product information.

The AOS AO6424 is an N-Channel Enhancement Mode Field Effect Transistor designed using advanced trench technology. This technology provides excellent on-resistance (RDS(ON)) and low gate charge, making it suitable for various applications.

 

Key electrical specifications include a drain-source breakdown voltage (BVDSS) of 30V and a continuous drain current (ID) of 5A at 25°C. The on-resistance is rated at a maximum of 38mΩ at VGS=10V and 50mΩ at VGS=4.5V. The gate threshold voltage (VGS(th)) typically ranges from 1.5V to 2.5V.

 

This MOSFET is designed for applications such as load switching and Pulse Width Modulation (PWM). Its thermal characteristics include a maximum power dissipation of 1.25W at 25°C and a junction-to-ambient thermal resistance of 130°C/W. The device operates within a junction and storage temperature range of -55°C to 150°C.

 

The AO6424 is packaged in a TSOP-6L surface-mount package. It is suitable for industrial applications and is available on tape and reel.

AO6424 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: AO6424 N-Channel Enhancement Mode Field Effect Transistor
Subcategory: N-Channel

AO6424 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

AO6424 Estimated Pricing

Qty Low High
1+ $1.87 $1.87

Estimated market price range - modelled values for guidance only, not live distributor offers.

AO6424 Features

  • 30V drain-source breakdown voltage.
  • Low on-resistance (RDS(ON)).
  • Suitable for load switch applications.
  • Advanced trench technology used.
  • TSOP-6L surface-mount package.

AO6424 Applications

  • Ideal for load switch circuits.
  • Used in PWM applications.
  • Suitable for industrial power supplies.
  • Consumer electronics power management.

AO6424 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the AO6424?

The drain-source breakdown voltage (BVDSS) of the AO6424 is a minimum of 30V.

What is the maximum continuous drain current for the AO6424 at 25°C?

The maximum continuous drain current (ID) for the AO6424 at 25°C is 5A.

What is the typical on-resistance (RDS(ON)) of the AO6424 at VGS=10V?

The typical on-resistance (RDS(ON)) of the AO6424 at VGS=10V is less than 38mΩ.

What is the gate threshold voltage (VGS(th)) for the AO6424?

The gate threshold voltage (VGS(th)) for the AO6424 typically ranges from 1.5V to 2.5V.

What package type is the AO6424 available in?

The AO6424 is available in a TSOP-6L package.

What is the operating temperature range for the AO6424?

The junction and storage temperature range for the AO6424 is -55°C to 150°C.

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