| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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9,000 pcs
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9000 pcs | On Request | 1 | On Request | On Request | 1628+ | On Request | On Request |
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| SVHC Present | |
| Tape & Reel |
The AOS AO6409A is a P-Channel MOSFET utilizing advanced trench technology. It provides excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 1.8V. This device is suitable for load switch applications.
Key electrical specifications include a drain-source voltage of -20V and a continuous drain current of -5.5A at 25°C. The on-resistance is as low as 41mΩ at VGS = -4.5V. Dynamic parameters such as input capacitance (Ciss) are 751pF typical, and total gate charge (Qg) is 9.3nC typical.
The AO6409A is housed in a TSOP-6 package and is qualified for industrial applications. It features ESD protection and operates within a junction temperature range of -55°C to 150°C. The part is marked as 'Not for New Designs'.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (VDS) of the AO6409A is -20V.
The maximum continuous drain current (ID) for the AO6409A is -5.5A at 25°C.
The typical on-resistance (RDS(ON)) of the AO6409A at VGS = -4.5V is less than 41mW.
The AO6409A is available in a TSOP-6 package.
The maximum operating junction temperature for the AO6409A is 150°C.