| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
13,539 pcs
|
13539 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| Mounting Type | |
| SVHC Present | |
| Tape & Reel |
The AO6402 is a 30V N-Channel MOSFET manufactured by AOS, utilizing advanced trench technology for excellent on-resistance and low gate charge. This device is suitable for load switch and PWM applications.
Key electrical characteristics include a Drain-Source Breakdown Voltage (BVDSS) of 30V and a continuous drain current (ID) of 5A at 25°C. The on-resistance (RDS(ON)) is rated at a maximum of 31mΩ at VGS=10V and 43mΩ at VGS=4.5V. The gate threshold voltage (VGS(th)) typically ranges from 1.2V to 2.4V.
Dynamic parameters such as input capacitance (Ciss) are 255pF, output capacitance (Coss) is 45pF, and reverse transfer capacitance (Crss) is 35pF. Switching parameters include a typical turn-on delay time (tD(on)) of 4.5ns and a turn-off delay time (tD(off)) of 14.5ns.
The AO6402 is supplied in a TSOP-6L surface-mount package and operates within a junction temperature range of -55°C to 150°C. The maximum power dissipation is 1.25W at 25°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage (VDS) for the AO6402 is 30V.
The continuous drain current (ID) of the AO6402 at 25°C is 5A.
The typical on-resistance (RDS(ON)) of the AO6402 at VGS=10V is 31mΩ.
The gate threshold voltage (VGS(th)) for the AO6402 ranges from 1.2V to 2.4V.
The AO6402 is supplied in a TSOP-6L package.
The operating temperature range for the AO6402 is -55°C to 150°C.