| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,833 pcs
|
4833 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request | |
|
1,600 pcs
|
1600 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Junction Temperature | |
| Mounting Type | |
| Tape & Reel |
The AOS AO6401 is a P-Channel MOSFET featuring advanced trench technology for excellent on-resistance (RDS(ON)) and low gate charge. It is designed for operation with gate voltages as low as 2.5V, making it suitable for load switch or PWM applications.
Key electrical characteristics include a Drain-Source Voltage of -30V and a maximum continuous drain current of -5A at 25°C. The device exhibits low on-resistance values, such as <47mΩ at VGS=-10V and <64mΩ at VGS=-4.5V. Its switching parameters, including turn-on and turn-off times, are also specified.
The AO6401 is housed in a TSOP-6L package, designed for surface mounting. The maximum junction temperature is rated at 150°C, with a power dissipation of 2W at 25°C ambient temperature. This MOSFET is qualified for industrial applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-Source Breakdown Voltage (BVDSS) is -30V when VGS is 0V.
The typical Gate Threshold Voltage (VGS(th)) is -0.9V.
The maximum RDS(ON) at VGS=-10V is 47mΩ.
The maximum continuous drain current (ID) is -5A at 25°C.
The AO6401 is available in a TSOP-6L package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.