AO5803E

The AO5803E is a dual P-channel metal-oxide-semiconductor field-effect transistor manufactured by Alpha & Omega Semiconductor. This component integrates two independent P-channel MOSFETs into a single compact footprint, making it ideal for space-constrained circuit designs. It operates with a maximum drain-to-source voltage of 20V and supports a continuous drain current of 0.6A at 25°C.

Engineered for logic-level compatibility, the device features a gate threshold voltage of up to 900mV. This allows direct interfacing with standard logic outputs while maintaining an on-resistance of 800 milliohms at a gate drive of 4.5V. The input capacitance is rated at 100pF under typical conditions, supporting moderate switching speeds. Thermal performance is robust, with a maximum power dissipation of 400mW and an operating junction temperature range spanning from -50°C to 150°C.

Packaged in a surface-mount SOT-563 configuration, also known as SC-89-6, the AO5803E facilitates automated assembly and reliable board integration. It is supplied in Digi-Reel packaging for streamlined manufacturing workflows. Engineers can utilize this dual MOSFET for load switching, battery protection circuits, and general-purpose low-voltage control applications where compact size and logic-level drive are required.