| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,400 pcs
|
5400 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request | |
|
3,250 pcs
|
3250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| Mounting Type | |
| Power Dissipation | |
| Tape & Reel |
The AOS AO4882 is a 40V Dual N-Channel MOSFET utilizing advanced trench technology to deliver excellent on-resistance (RDS(ON)) with low gate charge. This versatile device is suitable for a wide range of power conversion applications.
Key electrical characteristics include a Drain-Source Breakdown Voltage (BVDSS) of 40V and a maximum continuous drain current (ID) of 8A at 25°C. The static drain-source on-resistance is rated at a maximum of 19mΩ at VGS=10V and 27mΩ at VGS=4.5V. The gate threshold voltage (VGS(th)) typically ranges from 1.4V to 2.4V.
With a typical junction-to-ambient thermal resistance of 48°C/W at 25°C, the AO4882 is housed in a compact SOIC-8 package, designed for surface mounting. Its operating temperature range is -55°C to 150°C.
This MOSFET is tested for 100% UIS and 100% Rg, indicating robust performance and reliability for demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.58 | $1.58 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-Source Breakdown Voltage (BVDSS) of the AO4882 is 40V.
The maximum continuous drain current (ID) for the AO4882 at 25°C is 8A.
The typical RDS(ON) of the AO4882 at 10V VGS is 19mΩ.
The AO4882 is available in an SOIC-8 package.
The RoHS status of the AO4882 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the AO4882 is Level 1.