| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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The AOS AO4842 is a 30V Dual N-Channel MOSFET utilizing advanced trench technology for excellent on-resistance and low gate charge. This dual MOSFET configuration is suitable for compact and efficient switch and synchronous rectifier combinations, particularly in buck converters.
Key electrical characteristics include a maximum drain-source voltage of 30V and a continuous drain current of 7.7A at 25°C. The on-resistance is rated at a maximum of 21mΩ at VGS = 10V and 30mΩ at VGS = 4.5V. The device also features a low total gate charge, with typical values of 11nC at 10V and 3.5nC at 4.5V, contributing to efficient switching performance.
Packaged in an SO8 surface-mount package, the AO4842 is designed for applications requiring space efficiency. Its thermal characteristics include a maximum junction temperature of 150°C. The MOSFETs are 100% UIS and Rg tested, ensuring reliability for demanding applications.
This component is well-suited for various applications including automotive, cloud server, telecom infrastructure, computing, consumer electronics, and industrial power supplies. Its dual N-channel configuration makes it an efficient choice for power management solutions.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.58 | $1.58 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage for the AO4842 is 30V.
The continuous drain current of the AO4842 at 25°C is 7.7A.
The maximum on-resistance for the AO4842 at VGS = 10V is 21mΩ.
The typical total gate charge for the AO4842 at VGS = 10V is 11nC.
The AO4842 MOSFET is supplied in an SO8 package.
The operating temperature range for the AO4842 is -55 to 150°C.