| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,190 pcs
|
4190 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Input Capacitance | |
| Mounting Type | |
| Power Dissipation | |
| Tape & Reel |
The AO4840E is a 40V Dual N-Channel MOSFET manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology, offering low on-resistance (RDS(ON)) and low gate charge, making it efficient for power switching applications.
Key electrical characteristics include a Drain-Source Breakdown Voltage (BVDSS) of 40V and a maximum continuous drain current (ID) of 6A at 25°C. The static drain-source on-resistance is as low as 28mΩ at VGS=10V and 35mΩ at VGS=4.5V. The device also features a typical total gate charge (Qg) of 9nC at VGS=10V.
This MOSFET is designed for applications such as buck converters, DC motor drives, and load switches. It comes in a compact SO-8 package suitable for surface mounting.
The AO4840E is RoHS and Halogen-Free compliant, meeting environmental standards for modern electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.58 | $1.58 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 40V minimum at ID=250μA.
The AO4840E is available in an SO-8 surface mount package.
The junction and storage temperature range is -55°C to 150°C.
The typical gate threshold voltage is 2.1V at VDS=40V.
The maximum continuous drain current is 6A at TA=25°C.
The maximum static drain-source on-resistance is 28mΩ at VGS=10V, ID=6A.