| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,590 pcs
|
10590 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request | |
|
12 pcs
|
12 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| Mounting Type | |
| Power Dissipation | |
| SVHC Present | |
| Tape & Reel |
The AO4832 from Alpha and Omega Semiconductor is a 30V Dual N-Channel MOSFET utilizing advanced trench technology. This design provides excellent on-resistance (RDS(ON)) with low gate charge, making it suitable for high-side switch applications in Switched-Mode Power Supplies (SMPS) and other general-purpose uses.
Key electrical characteristics include a Drain-Source Breakdown Voltage (BVDSS) of 30V and a continuous drain current (ID) of 10A at 25°C. The device exhibits low on-resistance, with RDS(ON) at VGS=10V being less than 13mW and at VGS=4.5V being less than 17.5mW. The gate threshold voltage (VGS(th)) typically sits at 1.9V.
This MOSFET is housed in a compact SO8 package, suitable for surface mounting. It operates within a junction and storage temperature range of -55°C to 150°C. The thermal characteristics include a Maximum Junction-to-Ambient (RqJA) resistance of 40°C/W at 25°C ambient temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.58 | $1.58 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (BVDSS) for the AO4832 is 30V.
The typical gate threshold voltage (VGS(th)) for the AO4832 is 1.9V.
The continuous drain current (ID) for the AO4832 at 25°C is 10A.
The maximum on-resistance (RDS(ON)) of the AO4832 at VGS=10V is less than 13mW.
The AO4832 MOSFET is supplied in an SO8 package.
The AO4832 has a junction and storage temperature range of -55°C to 150°C.