| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,700 pcs
|
2700 pcs | On Request | 1 | On Request | On Request | 2012+ | On Request | On Request | |
|
166 pcs
|
166 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| Mounting Type | |
| Power Dissipation | |
| Tape & Reel |
The AO4822 is a 30V Dual N-channel MOSFET manufactured by AOS, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. This device is designed for applications such as load switching and Pulse Width Modulation (PWM).
Key electrical characteristics include a Drain-Source Breakdown Voltage (BVDSS) of 30V and a maximum continuous drain current (ID) of 8A at 25°C. The on-state resistance (RDS(ON)) is as low as 19mΩ at VGS=10V and 8A, and 26mΩ at VGS=4.5V and 6A. The total gate charge (Qg) is 15nC at VGS=10V and 7.5nC at VGS=4.5V.
This MOSFET is housed in an SO8 package and is designed for surface mount applications. It operates within a junction temperature range of -55°C to 150°C. The thermal characteristics include a maximum junction-to-ambient thermal resistance (RθJA) of 48°C/W at 25°C.
The AO4822 is suitable for various applications including automotive, cloud computing, consumer electronics, and industrial motor drives.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.58 | $1.58 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
8A at 25°C ambient.
19mOhm at VGS=10V, ID=8A.
1.2V to 2.4V.
-55°C to 150°C.
SO8 surface mount.
15nC at VGS=10V.