| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,210 pcs
|
2210 pcs | On Request | 1 | On Request | On Request | 17+14+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| Lead Style | |
| Mounting Type | |
| Power Dissipation | |
| Tape & Reel |
The AO4807 is a dual P-Channel enhancement mode MOSFET manufactured by Alpha & Omega Semiconductor (AOS). It is designed for applications requiring efficient power switching in a compact surface-mount package.
Key electrical specifications include a minimum drain-source breakdown voltage of -30V, a maximum continuous drain current of -6A at VGS=-10V, and a maximum static drain-source on-resistance of 35mOhm at VGS=-10V. The device also features a typical gate threshold voltage of -1.85V and a maximum junction temperature of 150°C.
The AO4807 is housed in an SOIC-8 package and is intended for surface mount mounting. It is supplied in tape and reel packaging. The device is RoHS3 compliant and has an MSL rating of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 1+ | $1.58 | $1.58 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is -30V.
The maximum continuous drain current is -6A at VGS=-10V.
The maximum static drain-source on-resistance is 35mOhm at VGS=-10V and 58mOhm at VGS=-4.5V.
The AO4807 is available in an SOIC-8 package.
The junction and storage temperature range is -55 to 150°C.