AO4807 The AO4807 is a 30V dual P-channel MOSFET array in an SOIC-8 package. It features logic-level gate drive, a 6A continuous drain current, and low on-resistance down to 35mΩ (max) at VGS=-10V.
Mfr Part #:

AO4807

Available from 1 distributors
Mfr Name: Alpha&Omega Semicondu Ctor
Alpha&Omega Semicondu Ctor
The AO4807 is a 30V dual P-channel MOSFET array in an SOIC-8 package. It features logic-level gate drive, a 6A continuous drain current, and low on-resistance down to 35mΩ (max) at VGS=-10V.
✓ Total Stock: 445 pcs
$ Price Range: $0.33 - $1.45

AO4807 Available from 1 distributor

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✓ Non-Authorised
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AO4807 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

AO4807 Description

Short technical summary and product information.

The AO4807, manufactured by Alpha & Omega Semiconductor, is a dual P-channel MOSFET built on advanced trench technology. It is configured as two independent P-channel MOSFETs in an SOIC-8 package. The device is rated for a maximum drain-to-source voltage of -30V and a continuous drain current of 6A at VGS=-10V. Its on-resistance is specified at 35mΩ maximum (21mΩ typical) at VGS=-10V and ID=-6A, and 58mΩ maximum (33mΩ typical) at VGS=-4.5V and ID=-5A. The MOSFET also features a logic-level gate, allowing operation at reduced gate voltages.

 

The device is characterized by low gate charge (16nC max at VGS=-10V) and fast switching performance, with typical turn-on delay of 8ns and turn-off delay of 17ns. The electrical specifications include a gate threshold voltage range from -1.3V to -2.4V, input capacitance of 760pF, and gate resistance of 3.2Ω typical. These characteristics make the AO4807 suitable for load switching and PWM applications, as highlighted in the manufacturer's datasheet.

 

The absolute maximum ratings include a gate-source voltage range of ±20V, power dissipation of 2W at 25°C ambient, and an operating junction temperature range of -55°C to 150°C. The body diode has a typical forward voltage of -0.8V and can handle a continuous current of 3.5A. The device is supplied in the standard SOIC-8 package, suitable for surface-mount assembly.

AO4807 Quick Information

Product Type: MOSFET Array
Canonical Name: AO4807 Dual P-Channel MOSFET, 30V, 6A, SOIC-8
Subcategory: P-Channel MOSFET Array

AO4807 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1
REACH Status: Compliant

AO4807 Estimated Pricing

Qty Low High
1+ $1.45 $1.45
10+ $0.92 $0.92
50+ $0.68 $0.68
100+ $0.61 $0.61
500+ $0.47 $0.47
3,000+ $0.38 $0.38
9,000+ $0.33 $0.33

Estimated market price range - modelled values for guidance only, not live distributor offers.

AO4807 Features

  • Dual P-channel MOSFET in SOIC-8 package.
  • Rated for -30V drain-source voltage.
  • Supports up to 6A continuous drain current.
  • Low on-resistance: 35mΩ max at -10V.
  • Logic-level gate drive for low-voltage control.

AO4807 Applications

  • Suitable as a load switch in electronic circuits.
  • Designed for PWM switching applications.
  • Dual P-channel architecture for power switching.

AO4807 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the operating voltage of the AO4807?

The maximum drain-to-source voltage (Vdss) is -30V, and the gate-source voltage is rated at ±20V.

What package is the AO4807 available in?

The AO4807 is available in an SOIC-8 surface-mount package.

What is the operating temperature range of the AO4807?

The operating junction temperature range is -55°C to 150°C.

What is the maximum continuous drain current?

The maximum continuous drain current is 6A at VGS=-10V.

What is the on-resistance at VGS=-10V?

The maximum on-resistance is 35mΩ, with typical 21mΩ, at ID=-6A and VGS=-10V.

Is the AO4807 a logic-level gate MOSFET?

Yes, the FET feature includes Logic Level Gate, and on-resistance is specified at VGS=-4.5V (58mΩ max).

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