| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,491 pcs
|
6491 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
6,413 pcs
|
6413 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,267 pcs
|
3267 pcs | On Request | 1 | On Request | On Request | 20+16+ | On Request | On Request |
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The AOS AO4800 is a 30V Dual N-Channel MOSFET utilizing advanced trench technology. This design provides excellent RDS(ON) and low gate charge, making it suitable for use as a compact and efficient switch and synchronous rectifier combination in buck converters.
Key electrical characteristics include a drain-source breakdown voltage of 30V and a continuous drain current of up to 6.9A at 25°C. The on-state resistance (RDS(ON)) is notably low, with a maximum of 27mΩ at VGS=10V. The device operates within a junction temperature range of -55°C to 150°C, with thermal resistance rated at 48°C/W maximum junction-to-ambient.
Packaged in an SO8 surface-mount package, the AO4800 is designed for efficient power management solutions. Its specifications make it a suitable component for various industrial and computing applications requiring reliable power switching.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.58 | $1.58 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current for the AO4800 is 6.9A at 25°C.
The RDS(ON) is a maximum of 27mΩ at VGS=10V.
The junction and storage temperature range is -55°C to 150°C.
The AO4800 is supplied in an SO8 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.