AO4616

The AO4616 from AOS is a complementary MOSFET featuring both N-channel and P-channel transistors within a single SO8 package. This configuration is particularly well-suited for low input voltage inverter applications.

The N-channel MOSFET boasts a Drain-Source Voltage (VDS) of 30V and a maximum continuous drain current (ID) of 8A at a Gate-Source Voltage (VGS) of 10V. Its On-Resistance (RDS(ON)) is as low as 20mΩ at VGS=10V and 28mΩ at VGS=4.5V. The P-channel MOSFET operates with a VDS of -30V and a maximum continuous drain current of -7A at VGS=-10V, with an RDS(ON) of 22mΩ at VGS=-10V and 40mΩ at VGS=-4.5V.

Key electrical characteristics include a typical Gate Threshold Voltage (VGS(th)) of 1.8V for the N-channel and -2V for the P-channel. The device exhibits low gate charge, with typical values of 7.5nC for the N-channel at VGS=4.5V and 9.6nC for the P-channel at VGS=-4.5V. Switching parameters such as turn-on delay time are typically 5ns and turn-off delay time is 19ns for the N-channel.

Packaged in a standard SO8 surface-mount package, the AO4616 is designed for efficient integration into various power management circuits. Its advanced trench technology contributes to its excellent performance characteristics, making it a reliable choice for demanding applications.