| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
30,000 pcs
|
30000 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request | |
|
27,058 pcs
|
27058 pcs | On Request | 1 | On Request | On Request | 2018+ | On Request | On Request | |
|
1,039 pcs
|
1039 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Lead Style | |
| Mounting Type |
The AOS AO4614B is a versatile 40V Dual P+N-Channel MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. This complementary MOSFET pair is suitable for various applications, including H-bridges, inverters, and other power switching circuits.
Key electrical characteristics include a drain-source voltage of 40V for the N-channel and -40V for the P-channel. The continuous drain current is rated at 6A for the N-channel and -5A for the P-channel at 25°C. The N-channel MOSFET offers a low on-resistance of 30mΩ at VGS=10V and 38mΩ at VGS=4.5V. The P-channel MOSFET provides an on-resistance of 45mΩ at VGS=-10V and 63mΩ at VGS=-4.5V.
Packaged in a standard SOIC-8 surface mount package, the AO4614B is designed for ease of integration into printed circuit boards. Its thermal characteristics include a junction-to-ambient thermal resistance of 74°C/W for steady-state conditions. The device operates within a junction and storage temperature range of -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.58 | $1.58 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V for both N-channel and P-channel.
SOIC-8 surface mount package.
-55°C to 150°C junction and storage temperature.
6A at 25°C, 5A at 70°C.
30mΩ maximum at Vgs=10V, ID=6A.
10.8nC typical at Vgs=10V.
Turn-on delay 6.4ns typical, turn-off delay 16.2ns typical.