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4,985 pcs
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4985 pcs | On Request | 1 | On Request | On Request | 2014+ | On Request | On Request |
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The AO4612 from Alpha and Omega Semiconductor is a 60V complementary enhancement mode field effect transistor designed for various applications. It features both n-channel and p-channel MOSFETs, making it suitable for H-bridge and inverter circuits.
Key electrical characteristics include a Drain-Source Voltage (VDS) of 60V for the n-channel and -60V for the p-channel. The continuous drain current is rated at 4.5A for the n-channel and -3.2A for the p-channel at 25°C. The device offers low on-resistance, with RDS(ON) < 56mΩ at VGS=10V for the n-channel and < 105mΩ at VGS=-10V for the p-channel.
This MOSFET is housed in a compact SOIC-8 package, suitable for surface mount applications. Its advanced trench technology ensures excellent performance characteristics, including low gate charge, which is beneficial for switching applications. The AO4612 is qualified for industrial use and operates within a junction temperature range of -55°C to 150°C.
Applications for the AO4612 include automotive, cloud computing, consumer electronics, and industrial motor drives. Its complementary nature allows for versatile circuit designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.58 | $1.58 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage for the n-channel AO4612 is 60V.
The typical Gate Threshold Voltage for the n-channel AO4612 is 2.1V.
The maximum Static Drain-Source On-Resistance at VGS=10V for the n-channel AO4612 is 56mΩ.
The maximum Drain-Source Voltage for the p-channel AO4612 is -60V.
The maximum continuous drain current for the p-channel AO4612 at 25°C is -3.2A.
The AO4612 MOSFET is available in an SOIC-8 package.
The RoHS status of the AO4612 is RoHS3 Compliant.