| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,000 pcs
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6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Industrial Grade | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs(th) (Max) @ Id |
The AO4606 is a dual N and P-Channel enhancement mode power MOSFET from Alpha & Omega Semiconductor. It features a maximum drain-source voltage of 30V for the N-Channel and -30V for the P-Channel, with continuous drain currents of 6A and -6.5A respectively at 25°C. The device offers low static drain-source on-resistance: 30 mΩ for the N-Channel and 28 mΩ for the P-Channel at Vgs=10V. It is designed for 4.5V gate drive applications and provides fast switching performance with typical gate charge of 6 nC (N-Ch) and 16 nC (P-Ch). The MOSFET is housed in an 8-SOIC surface mount package and supports an operating temperature range of -55°C to 150°C. Typical applications include DC fan control, motor drives, and half/full bridge topologies in consumer and industrial systems.
The N-Channel MOSFET has a maximum drain-source voltage of 30V, and the P-Channel has -30V.
It is available in an 8-SOIC (0.154", 3.90mm Width) surface mount package, also referred to as SO8.
The operating junction temperature range is -55°C to 150°C.
It is listed as RoHS3 compliant, but this status is unverified.
The N-Channel can handle 6A continuous at 25°C, and the P-Channel can handle -6.5A.
The N-Channel has a maximum Rds(on) of 30 mΩ at Vgs=10V, and the P-Channel has 28 mΩ.
For the N-Channel: minimum 1.2V, typical 1.8V, maximum 2.4V. For the P-Channel: minimum -1.3V, typical -1.85V, maximum -2.4V.