| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
41,259 pcs
|
41259 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
9,619 pcs
|
9619 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request | |
|
7,616 pcs
|
7616 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request | |
|
1,420 pcs
|
1420 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| Mounting Type | |
| Power Dissipation | |
| Tape & Reel |
The AOS AO4485 is a P-Channel MOSFET utilizing advanced trench technology to achieve excellent on-resistance (RDS(ON)) and low gate charge. This device is rated for a Drain-Source Voltage (VDS) of -40V and a continuous drain current (ID) of -10A at VGS = -10V.
Key electrical characteristics include a maximum RDS(ON) of 15mΩ at VGS = -10V and 20mΩ at VGS = -4.5V. The gate threshold voltage (VGS(th)) ranges from -1.7V to -2.5V. Dynamic parameters such as input capacitance (Ciss) are typically 2500pF, output capacitance (Coss) at 260pF, and reverse transfer capacitance (Crss) at 180pF. Total gate charge (Qg) is 42nC at VGS = -10V.
This MOSFET is housed in an SO8 package and is suitable for surface mounting. Its thermal characteristics include a maximum junction temperature of 150°C and a junction-to-ambient thermal resistance (RqJA) of 75°C/W at 25°C ambient temperature.
The AO4485 is suitable for use in DC-DC converter applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-Source Breakdown Voltage (BVDSS) is -40V.
The typical Gate Threshold Voltage (VGS(th)) is -1.9V.
The maximum Static Drain-Source On-Resistance (RDS(ON)) at VGS = -10V is 15mΩ.
The maximum continuous drain current (ID) is -10A at TA=25°C and VGS = -10V.
The typical input capacitance (Ciss) is 2500pF.
The typical total gate charge (Qg) at VGS = -10V is 42nC.
The maximum operating temperature (Junction and Storage Temperature Range) is 150°C.