| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
800 pcs
|
800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The AO4453 is a P-Channel MOSFET manufactured by Alpha & Omega Semiconductor. It is designed for low-voltage load switching and battery protection applications. The device features a maximum drain-source voltage of -12V and a continuous drain current of -9A at 25°C ambient temperature, with the current derated to -7A at 70°C. The on-resistance is as low as 15mΩ typical at Vgs=-4.5V and Id=-9A, ensuring efficient operation.
The MOSFET is housed in an SOIC-8 package, suitable for surface-mount assembly. It offers a pulsed drain current capability of -55A and a gate-source voltage range of ±8V. Thermal characteristics include a junction-to-ambient thermal resistance of 42°C/W (typical, t≤10s) and an operating junction temperature range of -55°C to 150°C.
The device is avalanche tested and specified with an avalanche current of 20A and avalanche energy of 20mJ. It also includes a body diode with a reverse recovery time of 20.7ns, making it suitable for applications requiring fast switching. Additional dynamic characteristics include input capacitance of 1370pF and total gate charge of 12.7nC, which help designers optimize gate drive circuits.
| Qty | Low | High |
|---|---|---|
| 3,000+ | $0.22 | $0.22 |
| 6,000+ | $0.22 | $0.22 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is -12V.
SOIC-8.
-55°C to 150°C (junction/storage).
The continuous drain current is -9A at 25°C and -7A at 70°C.
15mΩ typical (19mΩ maximum) at Vgs=-4.5V, Id=-9A.
±8V.
Yes, avalanche current is 20A and avalanche energy is 20mJ.