| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,100 pcs
|
7100 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The AO4447AL is a P-Channel MOSFET manufactured by AOS, designed for various electronic applications. It offers a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 17A at 25°C ambient temperature. The on-resistance (Rds On) is a maximum of 7mOhm at 17A and 10V gate-source voltage.
This MOSFET utilizes Metal Oxide Semiconductor (MOSFET) technology and is configured as a single device. It has a gate threshold voltage (Vgs(th)) of 1.6V at 250µA and a maximum gate-to-source voltage of ±20V. The input capacitance (Ciss) is a maximum of 5500pF at 15V drain-source voltage. The maximum power dissipation is rated at 3.1W at ambient temperature.
The AO4447AL operates within a temperature range of -55°C to 150°C. It is supplied in an 8-SOIC package and is suitable for surface mounting. The component is compliant with RoHS3 regulations and has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
17A at 25°C ambient.
7mOhm maximum at 17A drain current and 10V gate-source voltage.
8-SOIC surface mount package.
-55°C to 150°C junction temperature.
1.6V maximum at 250µA drain current.