| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
56 pcs
|
56 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Rds On (Max) @ Id, Vgs | |
| Technology |
The AO4447AL is a P-Channel MOSFET manufactured by Alpha and Omega Semiconductor. This component is designed for various electronic applications requiring efficient power switching.
Key electrical specifications include a Drain to Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 17A at 25°C. The On-Resistance (Rds On) is a maximum of 7mOhm at 17A and 10V gate-source voltage. The drive voltage ranges from 4V to 10V.
This MOSFET utilizes Metal Oxide Semiconductor (MOSFET) technology. It is supplied in a SOIC-8 package and is available in Tape & Reel (TR) packaging. The product status is listed as Obsolete.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) of the AO4447AL is 30V.
The continuous drain current (Id) at 25°C is 17A.
The maximum Rds On is 7 milliohms at 17A and Vgs=10V.
The AO4447AL is packaged in SOIC-8.
The drive voltage ranges from 4V to 10V.