AO4441 The AOS AO4441 is a 60V P-Channel MOSFET designed for load switch and PWM applications. It features low gate charge and excellent RDS(ON).
Mfr Part #:

AO4441

Available from 3 distributors
Mfr Name: AOS
AOS
The AOS AO4441 is a 60V P-Channel MOSFET designed for load switch and PWM applications. It features low gate charge and excellent RDS(ON).
✓ Total Stock: 4,031 pcs
$ Price Range: $2.40

AO4441 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,255 pcs
2255 pcs On Request 1 On Request On Request 18+ On Request On Request
Non-Authorised Inventory information
1,606 pcs
1606 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
170 pcs
170 pcs On Request 1 On Request On Request 15+ On Request On Request

AO4441 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Input Capacitance
Mounting Type
Power Dissipation

AO4441 Description

Short technical summary and product information.

The AOS AO4441 is a 60V P-Channel MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and ultra-low gate charge, making it suitable for load switch and PWM applications.

 

Key electrical characteristics include a Drain-Source Breakdown Voltage of -60V and a Gate-Source Voltage rating of ±20V. The Static Drain-Source On-Resistance is a maximum of 100mΩ at VGS=-10V and 130mΩ at VGS=-4.5V. Continuous Drain Current is rated at -4A at 25°C, with a Power Dissipation of 3.1W at 25°C.

 

Dynamic parameters include a typical Total Gate Charge of 16nC (at 10V) and 8nC (at 4.5V). Switching times are also specified, with Turn-On Delay Time at 8ns and Turn-Off Delay Time at 31.5ns.

 

This MOSFET is housed in a SOIC-8 package and is designed for surface mounting. Its specifications make it a versatile component for various power management tasks in computing, consumer electronics, and industrial applications.

AO4441 Quick Information

Product Type: MOSFET
Canonical Name: AO4441 60V P-Channel MOSFET
Subcategory: P-Channel

AO4441 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

AO4441 Estimated Pricing

Qty Low High
1+ $2.40 $2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

AO4441 Features

  • 60V P-Channel MOSFET
  • Low RDS(ON) of 100mΩ max
  • Low gate charge
  • SOIC-8 package
  • Suitable for PWM applications

AO4441 Applications

  • Load switch applications
  • PWM applications
  • Consumer electronics
  • Industrial power supplies
  • Computing

AO4441 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the AO4441?

The minimum drain-source breakdown voltage (BVDSS) is -60V at ID=-250mA, VGS=0V.

What is the maximum continuous drain current of the AO4441?

The maximum continuous drain current (ID) is -4A at TA=25°C.

What is the on-resistance of the AO4441?

The static drain-source on-resistance (RDS(ON)) is 100mΩ maximum at VGS=-10V, ID=-4A, and 130mΩ maximum at VGS=-4.5V.

What package does the AO4441 come in?

The AO4441 is available in an SOIC-8 surface mount package.

What is the operating temperature range for the AO4441?

The junction and storage temperature range is -55°C to 150°C.

What is the gate threshold voltage of the AO4441?

The gate threshold voltage (VGS(th)) ranges from -1V (minimum) to -3V (maximum) with a typical value of -2.1V at VDS=VGS, ID=-250mA.

What are the input and output capacitances of the AO4441?

Typical input capacitance (Ciss) is 930pF, output capacitance (Coss) is 85pF, and reverse transfer capacitance (Crss) is 35pF at VGS=0V, VDS=-30V, f=1MHz.

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