| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,255 pcs
|
2255 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
1,606 pcs
|
1606 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
170 pcs
|
170 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
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| Manufacturer Name | |
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The AOS AO4441 is a 60V P-Channel MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and ultra-low gate charge, making it suitable for load switch and PWM applications.
Key electrical characteristics include a Drain-Source Breakdown Voltage of -60V and a Gate-Source Voltage rating of ±20V. The Static Drain-Source On-Resistance is a maximum of 100mΩ at VGS=-10V and 130mΩ at VGS=-4.5V. Continuous Drain Current is rated at -4A at 25°C, with a Power Dissipation of 3.1W at 25°C.
Dynamic parameters include a typical Total Gate Charge of 16nC (at 10V) and 8nC (at 4.5V). Switching times are also specified, with Turn-On Delay Time at 8ns and Turn-Off Delay Time at 31.5ns.
This MOSFET is housed in a SOIC-8 package and is designed for surface mounting. Its specifications make it a versatile component for various power management tasks in computing, consumer electronics, and industrial applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage (BVDSS) is -60V at ID=-250mA, VGS=0V.
The maximum continuous drain current (ID) is -4A at TA=25°C.
The static drain-source on-resistance (RDS(ON)) is 100mΩ maximum at VGS=-10V, ID=-4A, and 130mΩ maximum at VGS=-4.5V.
The AO4441 is available in an SOIC-8 surface mount package.
The junction and storage temperature range is -55°C to 150°C.
The gate threshold voltage (VGS(th)) ranges from -1V (minimum) to -3V (maximum) with a typical value of -2.1V at VDS=VGS, ID=-250mA.
Typical input capacitance (Ciss) is 930pF, output capacitance (Coss) is 85pF, and reverse transfer capacitance (Crss) is 35pF at VGS=0V, VDS=-30V, f=1MHz.