| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,100 pcs
|
7100 pcs | On Request | 1 | On Request | On Request | 18+17+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Lead Style | |
| Mounting Type | |
| Power Dissipation | |
| Tape & Reel |
The AO4435 is a P-Channel MOSFET manufactured by Alpha & Omega Semiconductor (AOS). It features advanced trench technology for excellent RDS(ON) and low gate charge, with a 25V gate rating. The device has a drain-source breakdown voltage of -30V and a continuous drain current of -10.5A at 25°C.
Key electrical characteristics include a typical gate threshold voltage of -2.3V and a maximum on-resistance of 18mΩ at VGS = -10V. The input capacitance (Ciss) is typically 1130pF, and the total gate charge (Qg) at 4.5V is 9.5nC. Switching parameters show a turn-on delay time of 8.7ns and a turn-off delay time of 18ns.
With a power dissipation of 3.1W at 25°C and a maximum junction temperature of 150°C, the AO4435 is suitable for applications such as load switching and PWM control. It is supplied in an SOIC-8 package and is suitable for surface mounting.
This part is marked as obsolete by the manufacturer, and AOSP21321 is suggested as a replacement.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage (BVDSS) is -30V.
The maximum continuous drain current (ID) at TA=25°C is -10.5A.
The typical static drain-source on-resistance (RDS(ON)) at VGS = -10V is 18mΩ.
The typical total gate charge (Qg) at 4.5V is 9.5nC.
The AO4435 is supplied in an SOIC-8 package.
The junction and storage temperature range is -55°C to 150°C.