| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,020 pcs
|
7020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The AO4422L is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to achieve excellent RDS(ON) and low gate charge, making it suitable for load switching and PWM applications.
Key electrical specifications include a drain-source breakdown voltage (BVDSS) of 30V and a continuous drain current (ID) of up to 30A at 25°C ambient temperature, and 11A at 70°C. The static drain-source on-resistance (RDS(ON)) is a maximum of 15mΩ at VGS=10V and 11A, and 24mΩ at VGS=4.5V and 10A. The device operates within a junction temperature range of -55°C to 150°C.
This MOSFET is housed in a compact SOIC-8 surface-mount package. The source leads are separated, allowing for a Kelvin connection to bypass source inductance, which can be beneficial in certain high-frequency applications. The AO4422L is also available in a lead-free package.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) for the AO4422L is 30V.
The typical static drain-source on-resistance (RDS(ON)) for the AO4422L at VGS=10V and ID=11A is 15mΩ.
The continuous drain current (ID) rating for the AO4422L at TA=70°C is 11A.
The AO4422L has a junction and storage temperature range of -55°C to 150°C.
The AO4422L is supplied in an SOIC-8 package.
The AO4422L is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the AO4422L is 1 Unlimited.