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AO4414 The AO4414 is an N-Channel Enhancement Mode Field Effect Transistor from AOS. It features a 30V drain-source breakdown voltage and a continuous drain current of 8.5A.
Mfr Part #:

AO4414

Available from 1 distributors
Mfr Name: AOS
AOS
The AO4414 is an N-Channel Enhancement Mode Field Effect Transistor from AOS. It features a 30V drain-source breakdown voltage and a continuous drain current of 8.5A.
✓ Total Stock: 60,000 pcs
$ Price Range: $2.40

AO4414 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
60,000 pcs
On Request
60000 pcs On Request 1 On Request On Request 0338+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

AO4414 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Input Capacitance
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AO4414 Description

Short technical summary and product information.

The AO4414 is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor (AOS). This device utilizes advanced trench technology, offering excellent on-resistance (RDS(ON)) and low gate charge.

 

Key electrical specifications include a drain-source breakdown voltage (BVDSS) of 30V and a continuous drain current (ID) of 8.5A at 25°C. The static drain-source on-resistance (RDS(ON)) is a maximum of 26mΩ at VGS=10V and 8.5A, and 40mΩ at VGS=4.5V and 5A. The gate threshold voltage (VGS(th)) ranges from 1V to 3V.

 

With a power dissipation of 3W at 25°C and a maximum junction-to-ambient thermal resistance of 50°C/W, the AO4414 is suitable for various applications. It operates within a junction and storage temperature range of -55°C to 150°C.

 

The AO4414 is supplied in a SOIC-8 package. Its design is suitable for use as a load switch or in PWM applications. The source leads are separated to allow for a Kelvin connection, which can help bypass source inductance.

AO4414 Quick Information

Product Type: N-Channel FET
Series: AO4414
Canonical Name: AO4414 N-Channel Enhancement Mode Field Effect Transistor
Subcategory: N-Channel Enhancement Mode

AO4414 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

AO4414 Estimated Pricing

Qty Low High
1+ $2.40 $2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

AO4414 Features

  • 30V drain-source breakdown voltage.
  • 8.5A continuous drain current.
  • Low RDS(ON) of 26mΩ.
  • SOIC-8 package for surface mounting.
  • Advanced trench technology for efficiency.

AO4414 Applications

  • Suitable for load switch applications.
  • Ideal for PWM applications.
  • Consumer market qualified device.
  • Can utilize Kelvin source connection.

AO4414 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the AO4414?

30V.

What package is the AO4414 available in?

SOIC-8.

What is the operating temperature range?

-55°C to 150°C.

What is the gate threshold voltage?

1V minimum, 1.9V typical, 3V maximum.

What is the on-resistance?

26mΩ max at VGS=10V, ID=8.5A; 40mΩ max at VGS=4.5V, ID=5A.

What is the continuous drain current?

8.5A at TA=25°C, 7.1A at TA=70°C.

What is the total gate charge?

17nC typical at VGS=10V, VDS=15V, ID=8.5A.

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