| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 0903+ | On Request | On Request | |
|
171 pcs
|
171 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
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| Manufacturer Name | |
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The AOS AO4406 is an N-Channel Enhancement Mode Field Effect Transistor designed using advanced trench technology. It offers excellent R DS(ON) and low gate charge, with operation possible at gate voltages as low as 2.5V. This device is well-suited for high-side switch applications, particularly in notebook CPU core DC-DC conversion.
Key electrical specifications include a drain-source breakdown voltage (BVDSS) of 30V and a low static drain-source on-resistance (RDS(ON)) as low as 14mΩ at a gate-source voltage (VGS) of 10V. It also features a typical gate threshold voltage (VGS(th)) of 1V and a continuous drain current (ID) of up to 30A at 25°C ambient temperature.
The AO4406 is available in a SOIC-8 package, facilitating surface-mount assembly. Its advanced trench technology ensures efficient performance for demanding power management tasks.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source breakdown voltage is 30V.
The AO4406 is housed in a surface-mount SOIC-8 package.
The maximum junction temperature rating is 150°C.
The continuous drain current is 30A at an ambient temperature of 25°C.
The typical gate threshold voltage is 1V.
Turn-on delay is 6ns with a 7.5ns rise time, while turn-off delay is 50ns with a 10ns fall time.