AO4406 The AOS AO4406 is an N-Channel MOSFET with a 30V drain-source breakdown voltage and low on-resistance. It is suitable for high-side switching applications.
Mfr Part #:

AO4406

Available from 2 distributors
Mfr Name: AOS
AOS
The AOS AO4406 is an N-Channel MOSFET with a 30V drain-source breakdown voltage and low on-resistance. It is suitable for high-side switching applications.
✓ Total Stock: 3,171 pcs
$ Price Range: $2.40

AO4406 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,000 pcs
3000 pcs On Request 1 On Request On Request 0903+ On Request On Request
Non-Authorised Inventory information
171 pcs
171 pcs On Request 1 On Request On Request 16+ On Request On Request

AO4406 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Input Capacitance
Junction Temperature
Power Dissipation
Storage Temperature

AO4406 Description

Short technical summary and product information.

The AOS AO4406 is an N-Channel Enhancement Mode Field Effect Transistor designed using advanced trench technology. It offers excellent R DS(ON) and low gate charge, with operation possible at gate voltages as low as 2.5V. This device is well-suited for high-side switch applications, particularly in notebook CPU core DC-DC conversion.

 

Key electrical specifications include a drain-source breakdown voltage (BVDSS) of 30V and a low static drain-source on-resistance (RDS(ON)) as low as 14mΩ at a gate-source voltage (VGS) of 10V. It also features a typical gate threshold voltage (VGS(th)) of 1V and a continuous drain current (ID) of up to 30A at 25°C ambient temperature.

 

The AO4406 is available in a SOIC-8 package, facilitating surface-mount assembly. Its advanced trench technology ensures efficient performance for demanding power management tasks.

AO4406 Quick Information

Product Type: MOSFET
Canonical Name: AO4406 N-Channel Enhancement Mode Field Effect Transistor
Subcategory: N-Channel Enhancement Mode

AO4406 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

AO4406 Estimated Pricing

Qty Low High
1+ $2.40 $2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

AO4406 Features

  • 30V drain-source breakdown voltage.
  • Low RDS(ON) down to 14mΩ.
  • Operates with low gate voltages.
  • SOIC-8 surface mount package.
  • Excellent for DC-DC conversion.

AO4406 Applications

  • Ideal for battery management system protection.
  • Used in DC-DC converter synchronous rectification.
  • Suitable for motor control driver circuits.
  • Applied in general-purpose load switching designs.

AO4406 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the AO4406?

The maximum drain-source breakdown voltage is 30V.

What package type does the AO4406 use?

The AO4406 is housed in a surface-mount SOIC-8 package.

What is the maximum operating junction temperature?

The maximum junction temperature rating is 150°C.

What is the continuous drain current rating at 25°C?

The continuous drain current is 30A at an ambient temperature of 25°C.

What is the typical gate threshold voltage?

The typical gate threshold voltage is 1V.

How fast does the AO4406 switch on and off?

Turn-on delay is 6ns with a 7.5ns rise time, while turn-off delay is 50ns with a 10ns fall time.

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