| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,704 pcs
|
2704 pcs | On Request | 1 | On Request | On Request | 05+ | On Request | On Request | |
|
130 pcs
|
130 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| Lead Style | |
| Mounting Type | |
| Tape & Reel |
The AOS AO4405 is a P-Channel MOSFET with a Drain-Source Voltage (VDS) of -30V and a continuous drain current (ID) of -6A at 25°C. It utilizes advanced trench technology to achieve excellent On-State Resistance (RDS(ON)) of less than 50mΩ at VGS=-10V and less than 85mΩ at VGS=-4.5V, combined with low gate charge.
This MOSFET is suitable for applications such as load switching and Pulse Width Modulation (PWM). Key electrical characteristics include a Gate Threshold Voltage (VGS(th)) typically -1.9V, input capacitance (Ciss) of 520pF, and output capacitance (Coss) of 100pF. Dynamic parameters include a turn-on delay time (tD(on)) of 7.5ns and a turn-off delay time (tD(off)) of 19ns.
The AO4405 is housed in a SOIC-8 surface-mount package. Thermal characteristics include a maximum junction-to-ambient thermal resistance (RθJA) of 75°C/W at 25°C. The operating and storage temperature range is -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage (BVDSS) is -30V minimum at VGS=0V.
The continuous drain current (ID) is -6A maximum at TA=25°C and -5.1A at TA=70°C.
The static drain-source on-resistance (RDS(ON)) is 50mΩ maximum at VGS=-10V, ID=-6A, and 85mΩ maximum at VGS=-4.5V, ID=-4A.
The gate threshold voltage (VGS(th)) ranges from -1.4V minimum to -2.4V maximum, with a typical value of -1.9V at VDS=VGS.
The junction and storage temperature range is -55°C to 150°C.
The AO4405 is available in an SOIC-8 surface-mount package.
Typical switching times at VGS=-10V, VDS=-15V, RL=2.5Ω: turn-on delay 7.5ns, rise time 5.5ns, turn-off delay 19ns, fall time 7ns.