AO4403

The AOS AO4403 is a 30V P-Channel MOSFET utilizing advanced trench technology. This technology provides excellent on-resistance (RDS(ON)) and low gate charge, enabling operation with gate voltages as low as 2.5V. It is suitable for applications such as load switching and Pulse Width Modulation (PWM).

The device has a Drain-Source Voltage (VDS) of -30V and a continuous Drain Current (ID) of -6A at 25°C. The RDS(ON) is as low as 48mΩ at VGS=-10V and 4.5V, and 80mΩ at VGS=-2.5V. The maximum power dissipation is 3.1W at 25°C ambient temperature, with a junction-to-ambient thermal resistance of 31°C/W.

Packaged in a standard SOIC-8 surface mount package, the AO4403 is designed for efficient power management. Its operating temperature range is from -55°C to 150°C. The MOSFET also features a gate threshold voltage (VGS(th)) typically around -0.9V, with a range of -0.5V to -1.3V.

Key electrical characteristics include input capacitance (Ciss) of 645pF, output capacitance (Coss) of 80pF, and reverse transfer capacitance (Crss) of 55pF. The total gate charge (Qg) at 4.5V is 7nC. Turn-on delay time is typically 6.5ns, and turn-off delay time is typically 41ns.