| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,447 pcs
|
1447 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Input Capacitance | |
| Mounting Type | |
| Tape & Reel |
The AOS AO4335 is a P-Channel MOSFET utilizing advanced trench technology, offering excellent on-state resistance (RDS(ON)) and ultra-low gate charge. With a drain-source voltage (VDS) rating of -30V and a continuous drain current (ID) of -10.5A at 25°C, this MOSFET is well-suited for various power management applications.
Key electrical characteristics include a maximum RDS(ON) of 18mΩ at VGS = -10V and 36mΩ at VGS = -6V. The device also features a low gate threshold voltage, typically -2.3V. Dynamic parameters such as input capacitance (Ciss) of 1130pF and output capacitance (Coss) of 240pF are provided, along with switching parameters like turn-on delay time (tD(on)) of 8.7ns and turn-off delay time (tD(off)) of 18ns.
The AO4335 is housed in a SOIC-8 package, suitable for surface mount applications. Its thermal characteristics include a maximum junction-to-ambient thermal resistance of 60°C/W at 25°C ambient temperature. The operating temperature range is -55°C to 150°C.
This MOSFET is designed for applications such as load switching and Pulse Width Modulation (PWM) control. Its robust construction and performance metrics make it a reliable choice for industrial and consumer electronics.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage for the AO4335 is -30V.
The typical on-state resistance at VGS = -10V is 18mΩ.
The continuous drain current at 25°C is -10.5A.
The AO4335 is available in a SOIC-8 package.
The operating temperature range is -55°C to 150°C.
The AO4335 is RoHS3 Compliant.