| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,349 pcs
|
4349 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,248 pcs
|
2248 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| ESD Protection | |
| Form | |
| Input Capacitance | |
| Mounting Type | |
| Power Dissipation |
The AOS AO4262E is a 60V N-Channel MOSFET designed with Trench Power MV MOSFET technology. This component is characterized by its low on-resistance (RDS(ON)) and low gate charge, contributing to high efficiency in power applications.
Key electrical specifications include a drain-source breakdown voltage of 60V, a typical gate threshold voltage of 1.65V, and a maximum continuous drain current of 16.5A at 25°C. The static drain-source on-resistance is as low as 6.5mΩ at VGS=10V and 8.5mΩ at VGS=4.5V. Switching characteristics are also notable, with turn-on delay time of 6ns and turn-off fall time of 7ns.
This MOSFET is housed in an SO-8 package and is suitable for surface mounting. It is designed for applications such as high efficiency power supplies and secondary synchronous rectification. The device also features ESD protection rated at HBM Class 2.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage (BVDSS) is 60V.
The typical gate threshold voltage (VGS(th)) is 1.65V.
The maximum continuous drain current (ID) is 16.5A at 25°C.
The typical on-resistance (RDS(ON)) at VGS=10V is 6.5mΩ.
The AO4262E is supplied in an SO-8 package.
The junction and storage temperature range is -55°C to 150°C.