| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,389 pcs
|
1389 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The AO3481 is a P-Channel enhancement mode MOSFET from Alpha & Omega Semiconductor. It features a maximum drain-source voltage of 30V and a continuous drain current of 4A at Ta. The device has a typical on-resistance of 50 mOhm at Vgs=10V and Id=4A. The gate threshold voltage is 1.3V max at Id=250µA. The MOSFET is designed for low voltage switching applications. It is housed in a surface mount SOT-23-3 package, suitable for compact PCB designs. The operating temperature range is -55°C to 150°C. The device is RoHS compliant and REACH unaffected.
The maximum drain-source voltage is 30V.
It is available in a surface mount SOT-23-3 package.
The operating temperature range is -55°C to 150°C (junction temperature).
Yes, it is RoHS3 compliant.
The gate threshold voltage is 1.3V maximum at 250µA drain current.
The drain-source on-resistance is 50 mOhm maximum at 4A drain current and 10V gate-source voltage.
The maximum gate-source voltage is ±12V.